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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. 8 PACKAGE DRAWING (Unit: mm) 5 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4 +0.10 -0.05 FEATURES * Low on-state resistance N-channel RDS(on)1 = 36.0 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 m MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 m MAX. (VGS = -10 V, ID = -3.0 A) RDS(on)2 = 110 m MAX. (VGS = -4.5 V, ID = -3.0 A) * Low gate charge N-channel QG = 10 nC TYP. (VGS = 10 V) P-channel QG = 8.3 nC TYP. (VGS = -10 V) * Built-in gate protection diode * Small and surface mount package (Power SOP8) 1 1.44 4 5.37 MAX. 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER LEAD PLATING Note Note PACKING Tape 2500 p/reel PACKAGE Power SOP8 PA2791GR-E1-AT PA2791GR-E2-AT Pure Sn Note Pb-free (This product does not contain Pb in the external electrode and other parts.) EQUIVALENT CIRCUIT N-channel Drain P-channel Drain Gate Body Diode Gate Gate Protection Diode Body Diode Gate Protection Diode Source Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD 600 V TYP. (C = 100 pF, R = 1.5 k) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G18207EJ2V0DS00 (2nd edition) Date Published November 2007 NS Printed in Japan 2006, 2007 The mark PA2791GR ABSOLUTE MAXIMUM RATINGS (TA = 25C. All terminals are connected.) PARAMETER Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 Note2 Note2 Note2 SYMBOL VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg N-CHANNEL 30 20 5 20 1.7 2.0 150 -55 to +150 5 2.5 P-CHANNEL -30 UNIT V V A A W W C C m20 m5 m20 Total Power Dissipation (1 unit) Total Power Dissipation (2 units) Channel Temperature Storage Temperature Note3 Note3 IAS EAS 2 -5 A mJ Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 2000 mm x 1.6 mmt 2 Data Sheet G18207EJ2V0DS PA2791GR ELECTRICAL CHARACTERISTICS (TA = 25C. All terminals are connected.) N-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 3 A, VGS = 10 V, RG = 10 MIN. TYP. MAX. 10 UNIT A A V S 10 1.0 2.0 28.5 36.0 400 80 50 7 4 21 5 36.0 50.0 2.5 Drain to Source On-state Resistance m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = 5 A, VDD = 24 V, VGS = 10 V IF = 5 A, VGS = 0 V IF = 5 A, VGS = 0 V, di/dt = 50 A/s 10 1.5 2.7 0.86 20 16 Note Pulsed D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD Data Sheet G18207EJ2V0DS 3 PA2791GR P-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m16 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -3 A VGS = -10 V, ID = -3.0 A VGS = -4.5 V, ID = -3.0 A VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -15 V, ID = -3 A, VGS = -10 V, RG = 10 MIN. TYP. MAX. -10 UNIT A A V S m10 -1.0 1.0 63 79 300 75 60 8 14 50 40 82 110 -2.5 Drain to Source On-state Resistance m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = -5 A, VDD = -24 V, VGS = -10 V IF = 5 A, VGS = 0 V IF = 5 A, VGS = 0 V, di/dt = 50 A/s 8.3 1.2 2.4 0.96 37 29 Note Pulsed D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(-) 90% 10% 10% 90% VGS(-) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 4 Data Sheet G18207EJ2V0DS PA2791GR TYPICAL CHARACTERISTICS (TA = 25C) (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 2 1.5 1 0.5 0 0 2 units Mounted on ceramic substrate of 2 2000 mm x 1.6 mmt 1 unit 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - C 100 ID(pulse) PW = i ID - Drain Current - A 10 20 ID(DC) d it e m Li V ) i0 1 = S 0 1i 0 s 1i 0 0 m DC Po w er D m 1i s i i s m s 1 R D S( ) on G (V is si p at io n 0.1 Mounted on ceramic substrate of 2000 mm2 x 1.6 mmt, 1 unit TA = 25C Single pulse Li m it e d 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 73.5C/Wi 10 1 Mounted on ceramic substrate of 2000 mm2 x 1.6 mmt, 1 unit TA = 25C Single pulse 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 0.1 100 Data Sheet G18207EJ2V0DS 5 PA2791GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 25 20 ID - Drain Current - A 100 VGS = 10 V ID - Drain Current - A 10 1 0.1 0.01 0.001 Pulsed 0.0001 VDS = 10 V Pulsed 15 10 5 0 0 0.5 4.5 V TA = 150C 75C 25C -25C 1 1.5 2 2.5 3 0 1 2 3 4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 Tch - Channel Temperature - C 1 0.1 -25C 25C 75C TA = 150C 0.01 VDS = 10 V ID = 1 mA VDS = 10 V Pulsed 0.001 100 1m 10 m 100 m 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 100 Pulsed 80 60 40 20 0 1 10 ID - Drain Current - A 100 80 60 40 20 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID = 3.0 A Pulsed VGS = 4.5 V 10 V 100 6 Data Sheet G18207EJ2V0DS PA2791GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 80 60 40 10 V 20 0 -50 0 50 100 150 Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF 1000 ID = 3.0 A Pulsed Ciss Coss 100 Crss VGS = 4.5 V VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns VDS - Drain to Source Voltage - V 30 VDD = 15 V VGS = 10 V RG = 10 12 VDD = 24 V 15 V 6V 10 8 6 VGS VDS 0 2 4 6 8 4 2 ID = 5 A 0 10 12 QG - Gate Charge - nC VGS - Gate to Source Voltage - V 25 20 15 10 5 0 td(off) tf td(on) 10 tr 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 Pulsed 0.001 0 0.5 1 1.5 VGS = 4.5 V 0V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 10 VGS = 0 V di/dt = 50 A/s 1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet G18207EJ2V0DS 7 PA2791GR (2) P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 2 1.5 1 0.5 0 0 2 units Mounted on ceramic substrate of 2000 mm2 x 1.6 mmt 1 unit 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - C -100 ID(pulse) PW = s i ID - Drain Current - A -10 ID(DC) DC 1i 0 Po w 1i 20 m 0 s 1i 0 0 m m i s i s -1 d it e ) m Li i 0 V ) 1 on - S( = D R GS (V er D is si pa t io n -0.1 Mounted on ceramic substrate of 2000 mm2 x 1.6 mmt, 1 unit TA = 25C Single pulse Li m it e d -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 73.5C/Wi 10 1 Mounted on ceramic substrate of 2000 mm x 1.6 mmt, 1 unit TA = 25C Single pulse 0.1 100 2 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 8 Data Sheet G18207EJ2V0DS PA2791GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -25 -20 FORWARD TRANSFER CHARACTERISTICS -100 -10 ID - Drain Current - A VGS = -10 V VDS = -10 V Pulsed TA = 150C 75C 25C -25C ID - Drain Current - A -15 -10 -5 -1 -0.1 -0.01 -0.001 -4.5 V Pulsed 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -0.0001 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 -2.5 -2 -1.5 -1 -0.5 0 -50 1 0.1 -25C 25C 75C TA = 150C 0.01 VDS = -10 V ID = -1 mA 0 50 100 150 0.001 -100 VDS = -10 V Pulsed -1 m -10 m -100 m -1 -10 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m 160 140 120 100 80 60 40 20 0 -1 -10 -100 Pulsed -10 V VGS = -4.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 160 140 120 100 80 60 40 20 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V ID = -3.0 A Pulsed ID - Drain Current - A Data Sheet G18207EJ2V0DS 9 PA2791GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 160 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF 140 120 100 80 60 40 20 0 -50 0 50 100 150 ID = -3.0 A Pulsed -10 V VGS = -4.5 V Ciss Coss 100 Crss VGS = 0 V f = 1 MHz 10 -0.01 -0.1 -1 -10 -100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns VDS - Drain to Source Voltage - V -30 td(off) tf tr -12 VDD = -24 V -15 V -6 V -10 -8 -6 VGS -4 VDS -2 ID = -5 A 0 0 2 4 6 8 10 12 QG - Gate Charge - nC VGS - Gate to Source Voltage - V -25 -20 -15 -10 -5 0 10 td(on) VDD = -15 V VGS = -10 V RG = 10 -1 -10 -100 1 -0.1 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 10 1 0.1 0.01 Pulsed 0.001 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 VGS = -4.5 V 0V 10 VGS = 0 V di/dt = 50 A/s 1 0.1 1 10 100 IF - Diode Forward Current - A 10 Data Sheet G18207EJ2V0DS PA2791GR TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side Draw-out side -E1 TYPE -E2 TYPE MARKING INFORMATION A2791 Lot code 1 pin mark Pb-free plating marking RECOMMENDED SOLDERING CONDITIONS The PA2791GR should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Partial heating Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet G18207EJ2V0DS 11 PA2791GR * The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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